Electronic structure of the isolated vacancy in silicon-Reference-Cited by-同舟云学术

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Electronic structure of the isolated vacancy in silicon

Published:1971-01 Issue:5 Volume:32 Page:965-980
ISSN:0022-3697
Container-title:Journal of Physics and Chemistry of Solids
language:en
Short-container-title:Journal of Physics and Chemistry of Solids

Author:

Larkins F.P.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference23 articles.

1. Int. Conf. Crystal Lattice Defects;Watkins,1962

2. Int. Conf. Crystal Lattice Defects,1963

3. Proc. Symp. On Radiation Damage in Semiconductors;Watkins,1965

4. The Jahn-Teller instability with accidental degeneracy

5. Localized Defects in Semiconductors

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Extended Huckel Study of the Localized Centers in Silicon;Progress of Theoretical Physics Supplement;2013-05-14

2. An ab initio analysis of electronic states associated with a silicon vacancy in cubic symmetry;Solid State Communications;2011-11

3. Theory on Softening of Elastic Constants in Non-Doped and B-Doped Si with a Vacancy;Journal of the Physical Society of Japan;2008-04-15

4. An open-shell method for neutral vacancy in silicon and diamond;Physics of the Solid State;2000-04

5. Lattice distortions and electronic structure in the negative silicon vacancy;Physical Review B;1996-03-15

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