Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells-Reference-Cited by-同舟云学术

Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells

Published:2023-04 Issue: Volume:33 Page:101052
ISSN:2542-5293
Container-title:Materials Today Physics
language:en
Short-container-title:Materials Today Physics

Author:

Timofeev Vyacheslav A.^ORCID,Mashanov Vladimir I.^ORCID,Nikiforov Alexandr I.,Skvortsov Ilya V.^ORCID,Gayduk Alexey E.,Bloshkin Alexey A.^ORCID,Kirienko Viktor V.^ORCID,Utkin Dmitry E.^ORCID,Kolyada Dmitry V.,Firsov Dmitry D.^ORCID,Komkov Oleg S.

Publisher

Elsevier BV

Subject

Physics and Astronomy (miscellaneous),Energy (miscellaneous),General Materials Science

Reference42 articles.

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2. Atomically uniform Sn-rich GeSn semiconductor with 3.0-3.5 μm room-temperature optical emission;Assali;Appl. Phys. Lett.,2018

3. Recent advances in Si-compatible nanostructured photodetectors;Douhan;Technologies,2023

4. Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells;Fischer;Phys. Rev. Mater.,2020

5. On-chip infrared photonics with Si-Ge-heterostructures: what is next?;Fischer;APL Photon.,2022

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1. Excitation of hybrid modes in plasmonic nanoantennas coupled with GeSiSn/Si multiple quantum wells for the photoresponse enhancement in the short-wave infrared range;Applied Surface Science;2024-06

2. Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films;ACS Photonics;2024-05-03

3. Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection;Applied Surface Science;2024-05

4. Polarized reflectance spectroscopy of aluminum nanoantennas on the surface of emitting GeSiSn/Si heterostructures;ST PETER POLY U J-PH;2024

5. Mid-Infrared Photodetectors Based on Lattice Matched SiGeSn/GeSn Heterojunction Bipolar Transistor With an i-GeSn Absorber Layer;IEEE Sensors Journal;2023-12-01