Transport properties of few-layer NbSe2: From electronic structure to thermoelectric properties
Author:
Publisher
Elsevier BV
Subject
Physics and Astronomy (miscellaneous),Energy (miscellaneous),General Materials Science
Reference59 articles.
1. Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2;Scalise;Nano Res.,2012
2. Biaxial tensile strain-induced enhancement of thermoelectric performance of TiSe2 monolayer based on first-principles calculation;Nayeb Sadeghi;J. Mater. Chem. C,2019
3. Tunable band gaps in bilayer transition-metal dichalcogenides;Ramasubramaniam;Phys. Rev. B,2011
4. Atomically thin MoS2: a new direct-gap semiconductor;Mak;Phys. Rev. Lett.,2010
5. Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2;Kuc;Phys. Rev. B,2011
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Thermal and ablation properties of a high-entropy metal diboride: (Hf0.2Zr0.2Ti0.2Ta0.2Nb0.2)B2;Journal of the European Ceramic Society;2023-09
2. The growth of self-intercalated Nb1+xSe2 by molecular beam epitaxy: The effect of processing conditions on the structure and electrical resistivity;Journal of Vacuum Science & Technology A;2023-06-08
3. Magnetic‐Field Regulation of Nodal Topological Superconducting States in Monolayer Ising Superconductor NbSe2;physica status solidi (RRL) – Rapid Research Letters;2023-05-14
4. Phonons, magnons and lattice thermal transport in 2H-NbSe2: A first principles study;Physica B: Condensed Matter;2023-04
5. Phonon Dominated Thermal Transport in Metallic Niobium Diselenide from First Principles Calculations;Nanomaterials;2023-01-12
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3