Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0.5Zr0.5O2 ferroelectric thin films-Reference-Cited by-同舟云学术

Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0.5Zr0.5O2 ferroelectric thin films

Published:2023-12 Issue: Volume:24 Page:100406
ISSN:2588-8420
Container-title:Materials Today Nano
language:en
Short-container-title:Materials Today Nano

Author:

Zheng Yunzhe,Zhang Yuke,Xin Tianjiao,Xu Yilin,Qu Shuangquan^ORCID,Zheng Junding,Gao Zhaomeng,Zhong Qilan,Wang Yiwei,Feng Xiaoyu,Zheng Yonghui,Cheng Yan,Shao Ruiwen,Lin Fang,Lin Xiaoling,Tian He,Huang Rong,Duan Chungang,Lyu Hangbing

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference57 articles.

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5. The future of ferroelectric field-effect transistor technology;Khan;Nat. Electron.,2020

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1. The Investigation of Neuromimetic Dynamics in Ferroelectrics via In Situ TEM;Nano Letters;2024-06-03

2. Revealing the Role of Spacer Layer in Domain Dynamics of Hf_0.5Zr_0.5O₂ Thin Films for Ferroelectrics;Advanced Functional Materials;2024-05-20