Effect of the SiO2 interlayer properties with solid-source hydrogenation on passivated contact performance and surface passivation

Author:

Nemeth Bill,Harvey Steven P.,Li Jian V.,Young David L.,Upadhyaya Ajay,LaSalvia Vincenzo,Lee Benjamin G.,Page Matthew R.,Stradins Paul

Publisher

Elsevier BV

Reference9 articles.

1. “Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells”;Dingemans;Journal of Vacuum Science & Technology A,2012

2. “Interface and material characterization of thin ALD-Al2O3 layers on crystalline silicon”;Naumann;Energy Procedia,2012

3. “Polycrystalline silicon passivated tunneling contacts for high efficiency silicon solar cells”;Nemeth;Journal of Materials Research,2016

4. “Characterization of ion species of silicon oxide films using positive and negative secondary ion mass spectra”;Chiba;Applied Surface Science,2006

5. J.A. Aguiar, D.L. Young, B.G. Lee, W. Nemeth, S. Harvey, T. Aoki, M. Al-Jassim, and P. Stradins, “Atomic scale understanding of poly-Si/SiO2/c-Si passivated contacts: passivation degradation due to metallization”, 43rd IEEE PVSC, Portland, OR, USA, 2016, MePVSC223_0608064721 (2016).

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