Reduction of Light-induced Degradation of Boron-doped Solar-grade Czochralski Silicon by Corona Charging
Author:
Publisher
Elsevier BV
Reference10 articles.
1. Electronic properties of light-induced recombination centers in boron-doped czochralski silicon;Schmidt;Journal of Applied Physics,1999
2. Latent complexes of interstitial boron and oxygen dimers as a reason for degradation of silicon- based solar cells;Voronkov;Journal of Applied Physics,2010
3. Role of copper in light induced minority-carrier lifetime degradation of silicon;Savin;Applied Physics Letters,2009
4. Recombination activity of copper in silicon;Sachdeva;Applied Physics Letters,2001
5. Electrical and recombination properties of copper-silicide precipitates in silicon;Istratov;Journal of The Electrochemical Society,1998
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carrier‐Induced Degradation;Photovoltaic Solar Energy;2024-06-21
2. Relationship of Free Surface Area with Oxygen Concentration in Silicon Ingot Grown by Czochralski Method for High Efficiency Solar Cells;Journal of the Korean Physical Society;2020-11-20
3. Cu gettering by phosphorus-doped emitters in p-type silicon: Effect on light-induced degradation;AIP Advances;2018-01
4. Electrical Activity of Iron and Copper in Si, SiGe and Ge;Metal Impurities in Silicon- and Germanium-Based Technologies;2018
5. Recombination activity of light-activated copper defects inp-type silicon studied by injection- and temperature-dependent lifetime spectroscopy;Journal of Applied Physics;2016-09-28
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3