Integration Processes for nPERT Si Solar Cells Using Single Side Emitter Epitaxy and front Side Laser Doping-Reference-Cited by-同舟云学术

Integration Processes for nPERT Si Solar Cells Using Single Side Emitter Epitaxy and front Side Laser Doping

Published:2015-08 Issue: Volume:77 Page:527-533
ISSN:1876-6102
Container-title:Energy Procedia
language:en
Short-container-title:Energy Procedia

Author:

Kuzma-Filipek Izabela,Recaman-Payo Maria,Li Yuandong,Hajjiah Ali,Duerinckx Filip,Cornagliotti Emanuele,Castro Angel Uruena De,Sharma Aashish,Borgers Tom,Russell Richard,Tous Loic,John Joachim,Haslinger Michael,Aleman Monica,Szlufcik Jozef

Publisher

Elsevier BV

Reference10 articles.

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3. M. Recamán Payo, et al. “Opportunities for silicon epitaxy in bulk crystalline silicon photovoltaics”, EUPVSEC Amsterdam 2014.

4. A. Hurle et al., Proceedings of 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, 2004, pp. 459-462

5. http ://www.nanalyze.com/2014/07/solexel-grows-cheap-solar-cells-using-silicon-gas/.

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