Investigations on the Formation of Stacking Fault-like PID-shunts
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Elsevier BV
Reference8 articles.
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3. B. Jaeckel, M. Cosic, and J. Arp, PID Effect of c-Si Modules: Study of Degradation and Recovery to More Closely Mimic Field Behavior, Isr. J. Chem., 55, 1091-1097(2015).
4. Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells;Naumann;Solar Energy Materials & Solar Cells,2014
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