Experimental study of the Poole-Frenkel effect on the Si:Tl acceptor
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference12 articles.
1. On Pre-Breakdown Phenomena in Insulators and Electronic Semi-Conductors;Frenkel;Phys. Rev.,1938
2. The Three-Dimensional Poole-Frenkel Effect;Hartke;J. Appl. Phys.,1968
3. Electric Field and Impurity Concentration Effects on the Ionization Energy of Impurities. Application to Acceptors in ZnTe;Pautrat;Solid-St. Electron.,1980
4. Electric Field enhanced emission from non-Coulombic traps in semiconductors;Martin;J. Appl. Phys.,1981
5. Admittance Spectroscopy: A Powerful Characterization Technique for Semiconductor Crystals-Application to ZnTe;Pautrat;Solid-St. Electron.,1980
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of High Electric Fields on the Magnitudes of Current Steps Produced by Single Particle Displacement Damage;IEEE Transactions on Nuclear Science;2013-12
2. Rapid Thermal Annealing Induced Deep Level Defects in Te-Doped GaAs;physica status solidi (a);1998-08
3. Photoluminescence and transport studies of boron in 4H SiC;Journal of Applied Physics;1998-06-15
4. Ground States of the Ionized Isoelectronic Ti Acceptor in SiC;Materials Science Forum;1998-02
5. Phosphorus‐related donors in 6H‐SiC generated by ion implantation;Journal of Applied Physics;1996-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3