Electronic conduction process in 1T-TaS2-Reference-Cited by-同舟云学术

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Electronic conduction process in 1T-TaS2

Published:1980-01 Issue:1-4 Volume:99 Page:173-176
ISSN:0378-4363
Container-title:Physica B+C
language:en
Short-container-title:Physica B+C

Author:

Hambourger P.D.,di Salvo F.J.

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

1. Physics of Semiconductors;Fazekas,1976

2. Electrical, structural and magnetic properties of pure and doped 1T-TaS2

3. The low temperature electrical properties of 1T-TaS2

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preferential out-of-plane conduction and quasi-one-dimensional electronic states in layered 1T-TaS2;npj 2D Materials and Applications;2020-05-11

2. Stable Flatbands, Topology, and Superconductivity of Magic Honeycomb Networks;Physical Review Letters;2020-04-01

3. Emergent honeycomb network of topological excitations in correlated charge density wave;Nature Communications;2019-09-06

4. Quasi-one-dimensional metallic band dispersion in the commensurate charge density wave of 1T−TaS2;Physical Review B;2017-11-27

5. Pressure-induced bulk superconductivity in a layered transition-metal dichalcogenide 1T -tantalum selenium;Physical Review B;2017-06-09

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