Moiré-like fringes in transmission electron microscopy images of coherently strained semiconductor islands
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. InAs island‐induced‐strain driven adatom migration during GaAs overlayer growth
2. InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure
3. Electronic structure of InAs/GaAs self-assembled quantum dots
4. Comparison of two methods for describing the strain profiles in quantum dots
5. Strained state of Ge(Si) islands on Si: Finite element calculations and comparison to convergent beam electron‐diffraction measurements
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