Nitrogen vacancy and ferromagnetism in Cr-doped GaN: First-principles calculations-Reference-Cited by-同舟云学术

Nitrogen vacancy and ferromagnetism in Cr-doped GaN: First-principles calculations

Published:2010-11 Issue:11 Volume:183 Page:2662-2668
ISSN:0022-4596
Container-title:Journal of Solid State Chemistry
language:en
Short-container-title:Journal of Solid State Chemistry

Author:

Li Yanlu,Fan Weiliu,Sun Honggang,Cheng Xiufeng,Li Pan,Zhao Xian,Jiang Minhua

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Making Nonmagnetic Semiconductors Ferromagnetic

2. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

3. Dilute magnetic oxides

4. Exchange interactions in III-V and group-IV diluted magnetic semiconductors

5. Ab initio materials design and Curie temperature of GaN‐based ferromagnetic semiconductors

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