The structure and band gap design of high Si doping level Ag1−xGa1−xSixSe2 (x=1/2)-Reference-Cited by-同舟云学术

The structure and band gap design of high Si doping level Ag1−xGa1−xSixSe2 (x=1/2)

Published:2016-06 Issue: Volume:238 Page:21-24
ISSN:0022-4596
Container-title:Journal of Solid State Chemistry
language:en
Short-container-title:Journal of Solid State Chemistry

Author:

Zhang Shiyan,Mei Dajiang,Du Xin,Lin Zheshuai,Zhong Junbo,Wu Yuandong,Xu Jingli

Funder

National Natural Science Foundation of China

China “863″

Key Laboratory of Green Catalysis of Sichuan Institutes of High Education

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Reference53 articles.

1. Progress toward 20% efficiency in Cu(In,Ga)Se2 polycrystalline thin-film solar cells

2. Properties of 19.2% efficiency ZnO/CdS/CuInGaSe2 thin-film solar cells

3. New routes to sustainable photovoltaics: evaluation of Cu2ZnSnS4as an alternative absorber material

4. High-performance bulk thermoelectrics with all-scale hierarchical architectures

5. Convergence of electronic bands for high performance bulk thermoelectrics

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