Strain-driven morphology of Si1−xGex islands grown on Si(100)-Reference-Cited by-同舟云学术

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Strain-driven morphology of Si1−xGex islands grown on Si(100)

Published:2000-06 Issue:3 Volume:31 Page:315-321
ISSN:0968-4328
Container-title:Micron
language:en
Short-container-title:Micron

Author:

Pinto N,Murri R,Rinaldi R,Barucca G

Publisher

Elsevier BV

Subject

Cell Biology,Structural Biology,General Physics and Astronomy,General Materials Science

Reference23 articles.

1. Strain relaxation through islands formation in epitaxial SiGe thin films;Barucca;Appl. Surf. Sci.,1996

2. Effect of strain on surface diffusion and nucleation;Brune;Phys. Rev. B,1995

3. Strain induced modulations in the surface morphology of heteroepitaxial layers;Cullis;MRS Bulletin,1996

4. Role of hydrogen during Si capping of strained Ge or Si1−xGex hut clusters;Dentel;Thin Solid Films,1998

5. Dynamic self-organization of strained islands during SiGe epitaxial growth;Floro;Appl. Phys. Lett.,1998

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural and electrical investigations of MBE-grown SiGe nanoislands;Applied Physics A;2017-12-16

2. Silicon Heteroepitaxial Layer Characterization by Atomic Force Microscopy;IETE Journal of Research;2007-05

3. Hydrogen Sensor Based on RF-Sputtered Thermoelectric SiGe Film;Japanese Journal of Applied Physics;2003-04-15

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