Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy-Reference-Cited by-同舟云学术

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Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxy

Published:2014-04 Issue:4 Volume:14 Page:558-562
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Lee D.J.,Park C.S.,Lee Cheol Jin,Song J.D.,Koo H.C.,Yoon Chong S.,Yoon Im Taek,Kim H.S.,Kang T.W.,Shon Yoon

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference13 articles.

1. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

2. Multiferroic characteristics of the strained epitaxial Bi0.9Ho0.1FeO3 thin film

3. Evidence for a new passivating indium rich phosphate prepared by ultraviolet/ozone oxidation of InP

4. Indium phosphide passivation using thin layers of cadmium sulfide

5. Neutral manganese acceptor in GaP: An electron-paramagnetic-resonance study

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and low-field magnetoresistance transport effect of La0.7Ca0.3MnO3: MnO2 composite ceramics;Journal of Sol-Gel Science and Technology;2023-11-06

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