The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes-Reference-Cited by-同舟云学术

The effect of series resistance and interface states on the frequency dependent C–V and G/w–V characteristics of Al/perylene/p-Si MPS type Schottky barrier diodes

Published:2013-09 Issue:7 Volume:13 Page:1225-1230
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Zeyrek S.,Acaroğlu E.,Altındal Ş.,Birdoğan S.,Bülbül M.M.

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference45 articles.

1. Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni,Zn-doped)/n-Si Schottky diodes

2. Frequency and Temperature Dependence of Dielectric Properties of Au/Polyvinyl Alcohol (Co, Ni-Doped)/n-Si Schottky Diodes

3. Controlling of silicon–insulator–metal junction by organic semiconductor polymer thin film

4. Electrical and photocurrent characteristics of Au/PVA (Co-doped)/n-Si photoconductive diodes

5. Electrical and photovoltaic properties of cobalt doped zinc oxide nanofiber/n-silicon diode

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