Properties of Chemical Beam Epitaxy grown GaAs0.995N0.005 homo-junction solar cell-Reference-Cited by-同舟云学术

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Properties of Chemical Beam Epitaxy grown GaAs0.995N0.005 homo-junction solar cell

Published:2010-03 Issue:2 Volume:10 Page:S188-S190
ISSN:1567-1739
Container-title:Current Applied Physics
language:en
Short-container-title:Current Applied Physics

Author:

Bouzazi Boussairi,Nishimura Kenichi,Suzuki Hidetoshi,Kojima Nobuaki,Ohshita Yoshio,Yamaguchi Masafumi

Publisher

Elsevier BV

Subject

General Physics and Astronomy,General Materials Science

Reference13 articles.

1. 1-eV solar cells with GaInNAs active layer

2. Near-Field Magnetophotoluminescence Spectroscopy of Composition Fluctuations in InGaAsN

3. Nanoscale analysis of the In and N spatial redistributions upon annealing of GaInNAs quantum wells

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1. Advances in nanostructured homojunction solar cells and photovoltaic materials;Materials Science in Semiconductor Processing;2020-03

2. Bowing effect in elastic constants of dilute Ga(As,N) alloys;Applied Physics Letters;2016-05-02

3. Electrical and structural properties of AlGaNAs alloys grown by chemical beam epitaxy;physica status solidi (b);2016-01-18

4. Composition variation in Al-based dilute nitride alloys using apertureless scanning near-field optical microscopy;Physical Chemistry Chemical Physics;2016

5. A novel approach for the synthesis of tin antimony sulphide thin films for photovoltaic application;Solar Energy;2015-03

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