Effect of W impurity on resistance switching characteristics of NiOx films
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference21 articles.
1. Conductivity switching characteristics and reset currents in NiO films
2. TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
3. TiN electrode-induced bipolar resistive switching of TiO2 thin films
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1. Tri-level resistive switching characteristics and conductive mechanism of HfO<sub>2</sub>/NiO<sub><i>x</i></sub>/HfO<sub>2</sub> stacks;Acta Physica Sinica;2023
2. Structural study of NiOx thin films fabricated by radio frequency sputtering at low temperature;Thin Solid Films;2018-01
3. Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study;AIP Advances;2016-08
4. Orientation and concentration of Ag conductive filament in HfO2-based resistive random access memory: first-principles study;Acta Physica Sinica;2016
5. Transition of resistive switching behavior for a HfOx film induced by Ni doping;RSC Advances;2016
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