Molecular simulation of the plastic deformation and crack formation in single grit grinding of 4H-SiC single crystal-Reference-Cited by-同舟云学术

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Molecular simulation of the plastic deformation and crack formation in single grit grinding of 4H-SiC single crystal

Published:2023-06 Issue: Volume:247 Page:108147
ISSN:0020-7403
Container-title:International Journal of Mechanical Sciences
language:en
Short-container-title:International Journal of Mechanical Sciences

Author:

Gao Shang,Wang Haoxiang,Huang Han,Kang Renke

Funder

Australian Research Council

National Natural Science Foundation of China

Department of Science and Technology of Henan Province

Major Science and Technology Project of Hainan Province

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,Civil and Structural Engineering

Reference69 articles.

1. Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures;Zhang;Mater Sci Forum,2014

2. Handbook of SiC properties for fuel performance modeling;Snead;J Nucl Mater,2007

3. Status and prospects of cubic silicon carbide power electronics device technology;Li;Materials,2021

4. Research on the precision machining on SiC;Xiao;Adv Mater Res,2014

5. Science and art of ductile grinding of brittle solids;Huang;Int J Mach Tools Manuf,2021

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1. Microscopic removal mechanism of 4 H-SiC during abrasive scratching in aqueous H2O2 and H2O: Insights from ReaxFF molecular dynamics;Tribology International;2024-12

2. Impact of multiple abrasive particles on surface properties of SiC: A molecular dynamics simulation study;Vacuum;2024-12

3. Brittle-ductile transition mechanism during grinding 4H-SiC wafer considering laminated structure;International Journal of Mechanical Sciences;2024-12

4. Unveiling microstructure effect on nanoscratch behavior of gold-platinum alloys;International Journal of Mechanical Sciences;2024-11

5. Scratching properties of 4H–SiC single crystal after oxidation under different conditions;Wear;2024-11

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