Comparison of Ge substituted and Ga substituted garnet for 1.5 μm diameter bubble devices
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. Design and fabrication of large capacity bubble memory devices (invited)
2. Characteristics of a 1 Mbit/1 cm<sup>2</sup>magnetic bubble memory
3. Design and characterization of a 1 megabit bubble memory device with relaxed function designs
4. Submicron bubble garnets and their characterizations
5. Small bubble garnet films with collapse-field temperature coefficients ranging from -0.3 to about 0%/°C
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Temperature dependent magnetic properties of the 1.2‐μm bubble diameter compositions (La,Sm,Lu,Tm)3(Fe,Ga)5O12and (La,Sm,Lu,Tm,Ca)3(Fe,Ge)5O12;Journal of Applied Physics;1984-03-15
2. 4.1.9 References for 4.1;Garnets
3. 4.1.2.1.1 Saturation magnetization and Curie temperature;Garnets
4. 4.1.2.8.1 Static properties;Garnets
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