Low-temperature characteristics of resistive switching memory devices based on reduced graphene oxide-phosphor composites toward reliable cryogenic electronic devices-Reference-Cited by-同舟云学术

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Low-temperature characteristics of resistive switching memory devices based on reduced graphene oxide-phosphor composites toward reliable cryogenic electronic devices

Published:2022-08 Issue: Volume:195 Page:174-182
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Rani Janardhanan R^ORCID,Das Nayan C^ORCID,Kim Minjae,Jang Jae-Hyung^ORCID

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference28 articles.

1. Low temperature electroformation of TaOx-based resistive switching devices;Gala;Apl. Mater.,2016

2. 16 - neuromorphic computing with resistive switching memory devices;Ielmini,2019

3. Thermal-aware optimizations of ReRAM-based neuromorphic computing systems;Beigi,2018

4. ReRAM-based neuromorphic computing;Indiveri;Resist. Switch.,2016

5. ReRAM-based synaptic device for neuromorphic computing;Jang,2014

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1. Impact of the temperature on the conductive filament morphology in HfO2-based RRAM;Materials Letters;2024-02

2. Investigations of Sic Doping Effects on the Performance Improvement of Zno-Based Rrams and Conduction Mechanism Analysis at Both High and Low Temperature;2024

3. Unconventional Memristive Nanodevices;IEEE Nanotechnology Magazine;2022-12

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