Quantifying ion-induced defects and Raman relaxation length in graphene-Reference-Cited by-同舟云学术

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Quantifying ion-induced defects and Raman relaxation length in graphene

Published:2010-04 Issue:5 Volume:48 Page:1592-1597
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Lucchese M.M.,Stavale F.,Ferreira E.H. Martins,Vilani C.,Moutinho M.V.O.,Capaz Rodrigo B.,Achete C.A.,Jorio A.

Funder

CNPq

FINEP

FAPERJ

American Agency AFOSR/SOARD

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference19 articles.

1. The electronic properties of graphene;Castron Neto;Rev Mod Phys,2009

2. Ion implantation in diamond, graphite and related materials;Dresselhaus,1992

3. Raman spectrum of graphite;Tuinstra;J Chem Phys,1970

4. Use of Raman scattering to investigate disorder and crystallite formation in as-deposited and annealed carbon films;Dillon;Phys Rev B,1984

5. Interpretation of Raman spectra of disordered and amorphous carbon;Ferrari;Phys Rev B,2000

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