Simulation of flexoelectricity effect on imprint behavior of ferroelectric thin films
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference24 articles.
1. Time and temperature dependencies of imprint characteristics in SrBi2Ta2O9 capacitors
2. Experimental determination of interfacial-layer thickness from polarization-voltage hysteresis loops in Pb(Zr0.4Ti0.6)O3 thin films
3. Imprint Model Based on Thermionic Electron Emission Under Local Fields in Ferroelectric Thin Films
4. Nanoscale observation of photoinduced domain pinning and investigation of imprint behavior in ferroelectric thin films
5. Imprint in Ferroelectric Capacitors
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1. Flexoelectricity-stabilized ferroelectric phase with enhanced reliability in ultrathin La:HfO2 films;Applied Physics Reviews;2023-09-01
2. Computational Modelling of Flexoelectricity: State-of-the-art and Challenges;Current Trends and Open Problems in Computational Mechanics;2022
3. A phase-field simulation-based approach to determine flexoelectric coefficients from hysteresis loop of ferroelectrics;Journal of Applied Physics;2021-10-14
4. Crystal structure, ferroelectric and piezoelectric properties of epitaxial (1−x)(Bi0.5Na0.5)TiO3–x(Bi0.5K0.5)TiO3 films grown by hydrothermal method;Japanese Journal of Applied Physics;2020-08-27
5. Internal Electric Field and Polarization Backswitching Induced by Nb Doping in BiFeO3 Thin Films;ACS Applied Electronic Materials;2019-11-29
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