Evidence for nitrogen binding to surface defects for topological insulator Bi2Se3-Reference-Cited by-同舟云学术

Evidence for nitrogen binding to surface defects for topological insulator Bi2Se3

Published:2023-01 Issue: Volume:359 Page:115012
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Gottschalk Michael^ORCID,Lee Mal-Soon,Goodwin Eric,Mikolas Camille^ORCID,Chasapis Thomas,Chung Duck Young,Kanatzidis Mercouri G.,Mahanti Subhendra D.^ORCID,Tessmer Stuart

Funder

Division of Materials Sciences and Engineering

U.S. Department of Energy

National Energy Research Scientific Computing Center

Office of Science

Basic Energy Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference34 articles.

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4. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface;Zhang;Nat. Phys.,2009

5. Superconducting proximity effect and majorana fermions at the surface of a topological insulator;Fu;Phys. Rev. Lett.,2008

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1. High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy;Journal of Crystal Growth;2024-02

2. High-Temperature Indium Adsorption on Bi2se3(0001) Surface Studied by in Situ Reflection Electron Microscopy;2023