On semiconductor–metal transition in FeSi induced by ultrahigh magnetic field-Reference-Cited by-同舟云学术

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On semiconductor–metal transition in FeSi induced by ultrahigh magnetic field

Published:2024-04 Issue: Volume:382 Page:115469
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Kudasov Yu.B.^ORCID,Maslov D.A.

Publisher

Elsevier BV

Reference31 articles.

1. Paramagnetic excited state of FeSi;Jaccarino;Phys. Rev.,1967

2. Unconventional charge gap formation in FeSi;Schlesinger;Phys. Rev. Lett.,1993

3. Low-temperature transport, thermodynamic, and optical properties of FeSi;Paschen;Phys. Rev. B,1997

4. Evidence for a conducting surface ground state in high-quality single crystalline FeSi;Fang;Proc. Natl. Acad. Sci. USA,2018

5. Electronic structure studies of FeSi: A chiral topological system;Changdar;Phys. Rev. B,2020

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