Dependence of the heavy-hole exciton reduced mass on quantum-well size in InGaAs/GaAs heterostructures
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. InxGa1−xAs−InyGa1−yAsstrained-layer superlattices: A proposal for useful, new electronic materials
2. Graded‐index separate‐confinement InGaAs/GaAs strained‐layer quantum well laser grown by metalorganic chemical vapor deposition
3. Infrared Absorption and Electron Effective Mass inn-Type Gallium Arsenide
4. Determination of the Effective Electron Mass in GaAs by the Infra-Red Faraday Effect
5. Electron Effective Masses of InAs and GaAs as a Function of Temperature and Doping
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1. Dependence of hole’s effective mass on the spin polarization and temperature in quantum well;Physica B: Condensed Matter;2023-12
2. Determination of Carrier Density and Dynamics via Magnetoelectroluminescence Spectroscopy in Resonant-Tunneling Diodes;Physical Review Applied;2021-01-22
3. Recombination dynamics of Landau levels in an InGaAs/InP quantum well;Physical Review B;2018-10-22
4. Effects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well;Journal of Applied Physics;2014-11-28
5. Crossed excitons in a semiconductor nanostructure of mixed dimensionality;Applied Physics Letters;2014-09-08
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