Ferromagnetic ordering in Mn-doped quantum wells GaAs–AlGaAs resulting from the virtual Anderson transition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference17 articles.
1. Ferromagnetism of low-dimensional Mn-doped III-V semiconductor structures in the vicinity of the insulator-metal transition
2. Limits on the Curie temperature of (III,Mn)V ferromagnetic semiconductors
3. First-principles theory of dilute magnetic semiconductors
4. Valence-band structure of ferromagnetic semiconductor (In,Ga,Mn)As
5. Influence of Magnetic Dopants on the Metal-Insulator Transition in Semiconductors
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1. Anomalous Hall Effect in GaAs–AlGaAs Quantum Wells Doped by Nonmagnetic Impurities near the Metal–Insulator Transition;Journal of Experimental and Theoretical Physics;2022-07
2. Spin Glass and Isotropic Negative Magnetoresistance in GaAs–AlGaAs Quantum Wells with a Virtual Anderson Transition;Journal of Experimental and Theoretical Physics;2021-05
3. Electric bias-controlled switching of magnetization of ferrimagnetically coupled Mn delta-layers in a GaAs-AlGaAs quantum well;Journal of Magnetism and Magnetic Materials;2020-09
4. Dynamic Spin Phenomena in Complex Structures Based on Ferromagnetic Metals and Semiconductors (Scientific Summary);JETP Letters;2019-10
5. Ferromagnetic ordering in doped by Mn GaAs quantum wells supported by the upper Hubbard band of Mn centers;Journal of Magnetism and Magnetic Materials;2018-11
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