Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization-Reference-Cited by-同舟云学术

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Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization

Published:2015-07 Issue: Volume:215-216 Page:54-62
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Brahlek Matthew,Koirala Nikesh,Bansal Namrata,Oh Seongshik

Funder

IAMDN of Rutgers University

National Science Foundation NSF

Office of Naval Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference53 articles.

1. Colloquium: Topological insulators

2. The quantum spin Hall effect and topological insulators

3. Topological insulators and superconductors

4. Transport in three-dimensional topological insulators: Theory and experiment

5. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

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