Spinodal decomposition versus nucleation and growth mechanism of phase separation in nonstoichiometric silicon oxide films during high temperature annealing-Reference-Cited by-同舟云学术

Spinodal decomposition versus nucleation and growth mechanism of phase separation in nonstoichiometric silicon oxide films during high temperature annealing

Published:2019-01 Issue: Volume:287 Page:19-22
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Sarikov Andrey,Lisovskyy Igor

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference28 articles.

1. Stimulated emission in plasma-enhanced chemical vapour deposited silicon nanocrystals

2. High power efficiency in Si-nc/SiO2 multilayer light emitting devices by bipolar direct tunneling

3. Annealing characteristics of Si‐rich SiO2films

4. Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films

5. Influence of the supersaturation on Si diffusion and growth of Si nanoparticles in silicon-rich silica

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