Structural–electronic aspects related to the near-infrared light emission of Fe-doped silicon films-Reference-Cited by-同舟云学术

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Structural–electronic aspects related to the near-infrared light emission of Fe-doped silicon films

Published:2011-04 Issue:8 Volume:151 Page:587-590
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Gallo I.B.,Zanatta A.R.

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Fundação de Amparo à Pesquisa do Estado de São Paulo

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference19 articles.

1. A thin-film solar cell of high-quality -FeSi/Si heterojunction prepared by sputtering

2. Room-Temperature 1.6 µm Electroluminescence fromp+-Si/β-FeSi2/n+-Si Diodes on Si(001) without High-Temperature Annealing

3. Electronic Properties of Semiconducting Silicides

4. Optics and Photonics: An Introduction;Smith,2007

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