Tailoring the Indium island sizes on the Silicon surface by controlling the deposition rate. Interplay between the size selectivity due to the quantum confinement effect and kinetic factors-Reference-Cited by-同舟云学术

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Tailoring the Indium island sizes on the Silicon surface by controlling the deposition rate. Interplay between the size selectivity due to the quantum confinement effect and kinetic factors

Published:2014-01 Issue: Volume:177 Page:46-49
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Gouralnik A.S.,Ivanchenko M.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference15 articles.

1. Characterization of epitaxially grown indium islands on Si(111)

2. Effect of deposition rate and a-Si precursor or cap layer on structure and magnetic properties of iron films on silicon substrates

3. J.A. Venables, Introduction to Surface and Thin Film Processes, Cambridge University, Cambridge, 2000; J.A. Venables. Surface Science 299/300 (1994) 798–817.

4. A pulse-type evaporator for ultrafast deposition of thin films in ultrahigh vacuum

5. Study of the surface electromigration of In on Si(111) surfaces by the use of micro-electron-beams

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