Photoluminescence characteristics of GaAsSbN/GaAs epilayers lattice-matched to GaAs substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference27 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs
4. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m
5. Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells
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