Surface roughening in Si1−xGex alloy films by 100 MeV Au: Composition dependency
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference37 articles.
1. Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers
2. High-performance polymer light-emitting diodes utilizing modified Al cathode
3. Avalanche gain in GexSi1-x/Si infrared waveguide detectors
4. Ge Self-Diffusion in EpitaxialSi1−xGexLayers
5. Impact of 100MeV Au on the surface of relaxed Si0.5Ge0.5 alloy films studied by atomic force microscopy
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2. Swift heavy ion induced surface and microstructural evolution in metallic glass thin films;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-09
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