Characterization of deep centers in bulk n-type 4H–SiC
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference13 articles.
1. Deep level centers in silicon carbide: A review
2. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
3. Nitrogen donors in 4H‐silicon carbide
4. Nitrogen donors and deep levels in high‐quality 4H–SiC epilayers grown by chemical vapor deposition
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1. Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode;Semiconductors;2021-04
2. Study of Schottky barrier detectors based on a high quality 4H-SiC epitaxial layer with different thickness;Applied Surface Science;2021-01
3. Deep-level defects in gallium oxide;Journal of Physics D: Applied Physics;2020-11-03
4. Origin and anomalous behavior of dominant defects in 4H-SiC studied by conventional and Laplace deep level transient spectroscopy;Journal of Applied Physics;2020-02-14
5. First Principles Study of the Stability and Diffusion Mechanism of a Carbon Vacancy in the Vicinity of a SiO 2 /4H–SiC Interface;physica status solidi (a);2019-08-12
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