The origin of anomalous muonium in semiconductors-Reference-Cited by-同舟云学术

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The origin of anomalous muonium in semiconductors

Published:2000-08 Issue: Volume:289-290 Page:421-424
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Eshchenko D.G,Storchak V.G,Brewer J.H,Morris G.D,Clarker-Gayther M.A,Cottrell S.P,Cox S.F.J,Lord J.S

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Hydrogen in Semiconductors;Pankove,1990

2. Hydrogen interactions with defects in crystalline solids

3. Muonium states in semiconductors

4. Muonium Formation via Electron Transport in Silicon

5. Initial Recombination of Ions

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Muonium as a model for interstitial hydrogen in the semiconducting and semimetallic elements;Reports on Progress in Physics;2009-10-15

2. Comments on electric field experiments of positronium formation;Radiation Physics and Chemistry;2003-10

3. Spatial distribution of muonium-forming electrons in solid argon;Physica B: Condensed Matter;2000-08

4. Muonium formation dynamics in radiolytic tracks;Physica B: Condensed Matter;2000-08

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