μ−SR investigations in silicon-Reference-Cited by-同舟云学术

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μ−SR investigations in silicon

Published:2000-08 Issue: Volume:289-290 Page:574-577
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Mamedov T.N.,Gritsaj K.I.,Stoykov A.V.,Andrianov D.G.,Gorelkin V.N.,Herlach D.,Zimmermann U.,Kormann O.,Major J.,Schefzik M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Shallow acceptor centres in silicon studied by means of spin rotation of negative muons

2. V.N. Gorelkin, Physica B 289–290 (2000), these proceedings.

3. μ− SR in semiconductorsSR in semiconductors

4. Paramagnetic relaxation of shallow acceptor states in semiconductors

5. ESR From boron in silicon at zero and small external stress I. Line positions and line structure

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