Ultrafast carrier dynamics of resonantly excited 1.3-μm InAs/GaAs self-assembled quantum dots-Reference-Cited by-同舟云学术

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Ultrafast carrier dynamics of resonantly excited 1.3-μm InAs/GaAs self-assembled quantum dots

Published:2002-03 Issue:1-4 Volume:314 Page:263-267
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Quochi F.,Dinu M.,Bonadeo N.H.,Shah J.,Pfeiffer L.N.,West K.W.,Platzman P.M.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. D. Bimberg, M. Grundmann, N.N. Ledentsov, in: Quantum Dot Heterostructures, Wiley, London, 1999.

2. Exciton relaxation and radiative recombination in semiconductor quantum dots

3. Observation of Phonon Bottleneck in Quantum Dot Electronic Relaxation

4. Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm

5. Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation

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3. Carrier dynamics and lasing behavior of InAs/GaAs quantum dot lasers with short cavity lengths;Nanotechnology;2021-10-29

4. Theory of Quantum Light Sources and Cavity-QED Emitters Based on Semiconductor Quantum Dots;Quantum Dots for Quantum Information Technologies;2017

5. Carrier relaxation in (In,Ga)As quantum dots with magnetic field-induced anharmonic level structure;Applied Physics Letters;2016-07-04

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