Effect of Annealing on the Optical Properties of GaN Films Grown by Pulsed Laser Deposition-Reference-Cited by-同舟云学术

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Effect of Annealing on the Optical Properties of GaN Films Grown by Pulsed Laser Deposition

Published:2013-08 Issue:8 Volume:29 Page:752-756
ISSN:1005-0302
Container-title:Journal of Materials Science & Technology
language:en
Short-container-title:Journal of Materials Science & Technology

Author:

Baseer Haider M.,Al-Kuhaili M.F.,Durrani S.M.A.,Bakhtiari Imran

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Polymers and Plastics,Mechanical Engineering,Mechanics of Materials,Ceramics and Composites

Reference30 articles.

1. Substrates for gallium nitride epitaxy

2. Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review

3. GaN-Based RF Power Devices and Amplifiers

4. High-Power GaN P-N Junction Blue-Light-Emitting Diodes

5. Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N

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1. Recent progress of laser processing technology in micro-LED display manufacturing: A review;Optics & Laser Technology;2025-02

2. Effect of Cr Concentration on the Optical and Magnetic Properties of Cr‐TiN Thin Films Grown by Reactive Magnetron Sputtering;physica status solidi (a);2023-01-29

3. Research progress in the postprocessing and application of GaN crystal;CrystEngComm;2023

4. Electronic phase transition in CrN thin films grown by reactive RF magnetron sputtering;Ceramics International;2022-06

5. Optical and magnetic properties of cobalt doped TiN thin films grown by RF/DC magnetron sputtering;Journal of Magnetism and Magnetic Materials;2022-05

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