Characterization method of thermomechanical parameters for microelectronic materials

Author:

Perat O.,Dorkel J.M.,Scheid E.,Temple Boyer P.,Chung Y.S.,Peyre-Lavigne A.,Zecri M.,Tounsi P.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Chung Y et al. Energy capability energy capability of power devices with Cu layer integration. In: ISPSD 99

2. Pages I et al. Advanced power copper technology for SMARTMOS application designs. In: ISPSD 00

3. Garcon I et al. Thermal fatigue induced voiding in LDMOS transistors submitted to multiple energy discharges. In: ISTFA 2000

4. Microelectronique database developed by Center for Information and Numerical Data Analysis and Synthesis, Cindas

5. Surface charge and stress in the Si/SiO2 system;Brotherton;Solid State Electron,1973

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