Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique.
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Published:2002-09
Issue:9-11
Volume:42
Page:1673-1677
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ISSN:0026-2714
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Container-title:Microelectronics Reliability
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language:en
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Short-container-title:Microelectronics Reliability
Author:
Pogany D.,Kuzmik J.,Darmo J.,Litzenberger M.,Bychikhin S.,Unterrainer K.,Mozolova Z.,Hascik S.,Lalinsky T.,Gornik E.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials