Time-dependent dielectric breakdown of SiO2 films in a wide electric field range-Reference-Cited by-同舟云学术

Time-dependent dielectric breakdown of SiO2 films in a wide electric field range

Published:2001-01 Issue:1 Volume:41 Page:47-52
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Teramoto A,Umeda H,Azamawari K,Kobayashi K,Shiga K,Komori J,Ohno Y,Shigetomi A

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Electrical breakdown in thin gate and tunneling oxides

2. Chen IC, Holland SE, Hu C. Proceedings of the International Reliability Physics Symposium, IEEE, 1985. p. 24

3. Accelerated testing of time-dependent breakdown of SiO2

4. Chen IC, Hu C. Proceedings of the International Reliability Physics Symposium IEEE, 1988. p. 131

5. Modeling and characterization of gate oxide reliability

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