Author:
Imam Mohamed A.,Osman Mohamed A.,Osman Ashraf A.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. Technology trends of silicon-on-insulator––its advantages and problems to be solved;Yoshimi;IEDM Tech. Dig.,1994
2. Threshold voltage model for deep-submicron fully depleted SOI MOSFETs with back gate substrate induced surface potential effects;Imam;Microelectron. Reliab.,1999
3. An SOI-DRAM with wide operating voltage range by CMOS/SIMOX technology;Suma;IEEE J. Solid-State Circuits,1994
4. SOI for a 1-volt CMOS technology and application to a 512 kb SRAM with 3.5 ns access time;Shahidi;IEDM Tech. Dig.,1993
5. Determination and assessment of the floating-body voltage of SOI CMOS devices;Imam;IEEE Trans. Electron Devices,2001
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A New Power Gating Circuit Design Approach Using Double-Gate FDSOI;IEEE Transactions on Circuits and Systems II: Express Briefs;2018-08