Growth of CuGaSe2 film by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Growth of CuGaSe2 film by molecular beam epitaxy

Published:1996-02 Issue:1 Volume:27 Page:53-58
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Yamada Akimasa,Makita Yunosuke,Niki Shigeru,Obara Akira,Fons Paul,Shibata Hajime

Publisher

Elsevier BV

Subject

General Engineering

Reference16 articles.

1. Preparation and characteristics of CuGaSe2/CdS solar cells;Romeo;Appl. Phys. Lett.,1977

2. Thin film tundem solar cells based on II–VI compounds;Bloss,1984

3. Physical properties and photovoltaic potential of thin films of CuGaSe2;Noufi;Solar Cells,1986

4. Characterization of evaporated and selenized CuInSe2 and CuGaSe2 devices;Schock,1989

5. Progress in CuGaSe2 based thin film solar cells;Klenk,1991

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impacts of KF Post-Deposition Treatment on the Band Alignment of Epitaxial Cu(In,Ga)Se₂ Heterojunctions;ACS Applied Materials & Interfaces;2022-04-05

2. Optical and Structural Properties of High-Efficiency Epitaxial Cu(In,Ga)Se2 Grown on GaAs;ACS Applied Materials & Interfaces;2019-12-10

3. CuGaSe 2 Thin Film Solar Cells: Challenges for Developing Highly Efficient Wide‐Gap Chalcopyrite Photovoltaics;physica status solidi (a);2019-01-28

4. Single-crystal Cu(In,Ga)Se2 solar cells grown on GaAs substrates;Applied Physics Express;2018-07-19

5. Epitaxial CuGaSe2Thin Films − Removal of Cu2−xSe Secondary Phase From Film Surface;physica status solidi (b);2017-09-01

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