Thin SiO2 films nitrided in N2O-Reference-Cited by-同舟云学术

Thin SiO2 films nitrided in N2O

Published:1994-10 Issue:7 Volume:25 Page:495-500
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Bellafiore N.,Pio F.,Riva C.

Publisher

Elsevier BV

Subject

General Engineering

Reference5 articles.

1. Electrical and reliability characteristics of ultrathin oxynitride gate dielectrics prepared by rapid thermal process in N2O;Hwang;IEEE IEDM, 90–421, CH2865-5/90,1990

2. Accelerated current test for tunnel oxide evaluation;Cappelletti,1991

3. Thin SiO2 films nitrided by RTP for applications in EEPROM;Dutoit,1993

4. High reliable thin nitrided films formed by rapid thermal processing in N2O ambient;Fukuda;J. Appl. Phys.,1990

5. Effects of N2O anneal and reoxidation on thermal oxide characteristics;Liu;IEEE EDL,1992

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