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Thin SiO2 films nitrided by rapid thermal processing in NH3 or N2O for applications in EEPROMs

  • Published:1994-10 Issue:7 Volume:25 Page:539-551
  • ISSN:0026-2692
  • Container-title:Microelectronics Journal
  • language:en
  • Short-container-title:Microelectronics Journal

Author:

Dutoit M.,Bouvet D.,Mi J.,Novkovski N.,Letourneau P.

Publisher

Elsevier BV

Subject

General Engineering

Reference36 articles.

1. Properties of thin oxynitride films used as floating-gate tunneling dielectrics;Jenq;IEDM '82 Tech. Dig.,1982

2. Electrical and physical properties of ultrathin reoxidized nitrided oxides prepared by rapid thermal processing;Hori;IEEE,1989

3. Furnace nitridation of thermal SiO2 in pure N2O ambient for VLSI MOS applications;Ahn;IEEE,1992

4. Novel N2O oxynitridation technology for forming highly reliable EEPROM tunnel oxide films;Fukuda;IEEE,1991

5. Electrical characteristics of ultrathin oxynitride gate dielectric prepared by rapid thermal oxidation of Si in N2O;Hwang;Appl. Phys. Lett.,1990

Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Peculiarities of the Interface between High-Permittivity Dielectrics and Semiconductors;Frontiers in Materials;2014-12-08

2. Electrical characterization of metal–oxide–semiconductor capacitors with anodic and plasma-nitrided oxides;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2000-03

3. Low-frequency noise in electrically stressed n-MOSFETs;Solid-State Electronics;1999-05

4. On the impeded growth of oxide films on Si in N 2 O ambient;Applied Physics A: Materials Science & Processing;1999-05-01

5. Endurance of EEPROM-Cells Using Ultrathin NO and NH3 Nitrided Tunnel Oxides;Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices;1998
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