An introduction to GaAs/GaAlAs HBTs for power applications-Reference-Cited by-同舟云学术

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An introduction to GaAs/GaAlAs HBTs for power applications

Published:1993-12 Issue:8 Volume:24 Page:779-794
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Crouch M.A.,Hilton K.P.

Publisher

Elsevier BV

Subject

General Engineering

Reference21 articles.

1. Two-dimensional electron gas at a semiconductor-semiconductor interface

2. Modulation-doped (Al,Ga)As/GaAs FETs with high transconductance and electron velocity

3. GaAlAs/GaAs heterojunction microwave bipolar transistor

4. Presentation at IEEE Military Communications Conference;Smith,1986

5. High-efficiency millimeter-wave GaAs/GaAlAs power HEMT's

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and microstructural investigation of Au/Pd/ri ohmic contacts for AIGaAs/GaAs heterojunction bipolar transistors;Materials Science and Technology;1995-10

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