Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire-Reference-Cited by-同舟云学术

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Lattice parameters of GaN single crystals, homoepitaxial layers and heteroepitaxial layers on sapphire

Published:1999-05 Issue:1-2 Volume:286 Page:271-275
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Leszczynski M,Prystawko P,Suski T,Lucznik B,Domagala J,Bak-Misiuk J,Stonert A,Turos A,Langer R,Barski A

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference17 articles.

1. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

2. J. Krüger, G. S. Sudhir, D. Corlatan, Y. Cho, Y. Kim, R. Klockenbrink, S. Ruvimov, Z. Liliental-Weber, C. Kisielowski, M. Rubin, E. R. Weber, B. McDermott, R. Pittman, E. R. Gertner, Proc. of the Fall '97 Meeting of the Materials Research Society, Boston, 1997, 482, p. 447.

3. Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates

4. Thermal expansion of gallium nitride

5. Lattice parameters of gallium nitride

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