First principles study of RbVF3: A spin gapless semiconductor under high pressure-Reference-Cited by-同舟云学术

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First principles study of RbVF3: A spin gapless semiconductor under high pressure

Published:2019-04 Issue: Volume:58 Page:132-136
ISSN:0577-9073
Container-title:Chinese Journal of Physics
language:en
Short-container-title:Chinese Journal of Physics

Author:

Huang H.M.,Jiang Z.Y.,Yang J.T.,Xiong Y.C.,He Z.D.,Zhu Z.W.,Laref A.

Funder

National Natural Science Foundation of China

Hubei University of Automotive Technology

Natural Science Foundation of Hubei Province

Scientific Research Items Foundation of Hubei Educational Committee

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference30 articles.

1. Spintronics: A Challenge for Materials Science and Solid-State Chemistry

2. Spintronics: Fundamentals and applications

3. Dirac spin-gapless semiconductors: promising platforms for massless and dissipationless spintronics and new (quantum) anomalous spin Hall effects

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