Optically-activated cascode configuration for 650 V GaN FET devices and packaging parasitic inductance effects-Reference-Cited by-同舟云学术

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Optically-activated cascode configuration for 650 V GaN FET devices and packaging parasitic inductance effects

Published:2019-02 Issue: Volume:178 Page:909-917
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Hemmat Zahra^ORCID,Mojab Alireza^ORCID,Moreno Enrique^ORCID,Ahmadiparidari Alireza,Paryavi Mohsen,Alizadeh Mehrdad,Michael Ernest Alexander

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Design and evaluation of cascode GaN FET for switching power conversion systems;Jung;ETRI J.,2017

2. Evaluation and Applications of 600V/650V Enhancement-mode GaN Devices;Huang,2015

3. Characterization and Failure Mode Analysis of Cascode GaN HEMT;Liu,2014

4. Transphorm, Highest Performance, Highest Reliability GaN, https://www.transphormusa.com; [Accessed 24 April 2018].

5. Photonic power electronics: past, present, and future;Mazumder;IEEE Applied Power Electronics Conference and Exposition (APEC),2015

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