Analysis of carrier transport properties in GaN/Al0.3Ga0.7N multiple quantum well nanostructures-Reference-Cited by-同舟云学术

Analysis of carrier transport properties in GaN/Al0.3Ga0.7N multiple quantum well nanostructures

Published:2011-04 Issue:7 Volume:122 Page:626-630
ISSN:0030-4026
Container-title:Optik
language:en
Short-container-title:Optik

Author:

Talele Kanchan,Samuel E.P.,Patil D.S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Cathodoluminescence study of GaN-based film structures;Jiang;J Mater Sci: Mater. Electron.,2008

2. Optical properties of GaN/AlGaN QW nanostructures with different well and barrier widths;Esmaeili;J. Phys.: Condens. Matter.,2007

3. Transient transport in III-nitrides: interplay of momentum and energy relaxation times;Cloves;J. Phys.: Condens. Matter.,2007

4. Growth and characteristics of low dislocation density GaN grown on SI(111) from a single process;Chen;Appl. Phys. Lett.,2006

5. Carrier relaxation dynamics and steady-state charge distributions in coupled InGaN/GaN multiple and single quantum wells;Khatsevich;J. Appl. Phys.,2007

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